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| SUM34N10-35 New Product Vishay Siliconix N-Channel 100-V (D-S) 175_C MOSFET PRODUCT SUMMARY V(BR)DSS (V) 100 FEATURES rDS(on) (W) ID (A) 34 32 0.035 @ VGS = 10 V 0.040 @ VGS = 6 V D TrenchFETr Power MOSFETS D 175_C Junction Temperature D New Low Thermal Resistance Package D TO-263 G G DS S N-Channel MOSFET Top View Ordering Information: SUM34N10-35 ABSOLUTE MAXIMUM RATINGS (TC = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 175_C) Pulsed Drain Current Avalanche Current Repetitive Avalanche Energyb Maximum Power Dissipationb Operating Junction and Storage Temperature Range L = 0.1 mH TC = 25_C TA = 25_Cd TC = 25_C TC = 125_C Symbol VDS VGS ID IDM IAR EAR PD TJ, Tstg Limit 100 "20 34a 20a 60 34 57.8 100c 3.75 - 55 to 175 Unit V A mJ W _C THERMAL RESISTANCE RATINGS Parameter Junction-to-Ambient (PCB Junction-to-Case (Drain) Notes a. Package limited. b. Duty cycle v 1%. c. See SOA curve for voltage derating. d. When mounted on 1" square PCB (FR-4 material). Document Number: 72160 S-03415--Rev. A, 03-Mar-03 www.vishay.com Mounted)d Symbol RthJA RthJC Limit 40 1.5 Unit _C/W 1 SUM34N10-35 Vishay Siliconix New Product SPECIFICATIONS (TJ =25_C UNLESS OTHERWISE NOTED) Parameter Static Drain-Source Breakdown Voltage Gate-Threshold Voltage Gate-Body Leakage V(BR)DSS VGS(th) IGSS VDS = 0 V, ID = 250 mA VDS = VGS, ID = 250 mA VDS = 0 V, VGS = "20 V VDS = 80 V, VGS = 0 V Zero Gate Voltage Drain Current g IDSS VDS = 80 V, VGS = 0 V, TJ = 125_C VDS = 80 V, VGS = 0 V, TJ = 175_C On-State Drain Currenta ID(on) VDS w 5 V, VGS = 10 V VGS = 10 V, ID = 20 A Drain-Source On-State Drain Source On State Resistancea VGS = 6 V, ID = 15 A rDS( ) DS(on) VGS = 10 V, ID = 20 A, TJ = 125_C VGS = 10 V, ID = 20 A, TJ = 175_C Forward Transconductancea gfs VDS = 15 V, ID = 30 A 10 60 0.028 0.032 0.035 0.040 0.067 0.087 S W 100 V 2 4 "100 1 50 250 A m mA nA Symbol Test Condition Min Typ Max Unit Dynamicb Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Chargec Gate-Source Chargec Ciss Coss Crss Qg Qgs Qgd RG td(on) tr td(off) tf VDD = 50 V, RL = 1.67 W ID ^ 30 A, VGEN = 10 V, RG = 2.5 W VDS = 50 V, VGS = 10 V, ID = 30 A , , VGS = 0 V, VDS = 25 V, f = 1 MHz 2000 210 77 35 10 10 4.5 11 65 30 55 20 100 45 85 ns W 55 nC pF Gate-Drain Chargec Gate Resistance Turn-On Delay Timec Rise Timec Turn-Off Delay Timec Fall Timec Source-Drain Diode Ratings and Characteristics (TC = Continuous Current Pulsed Current Forward Voltagea Reverse Recovery Time Peak Reverse Recovery Current Reverse Recovery Charge IS ISM VSD trr IRM(REC) Qrr 25_C)b 34 60 IF = 20 A, VGS = 0 V 1.0 125 IF = 60 A, di/dt = 100 A/ms , m 4.5 0.28 1.5 200 7 0.7 A V ns A mC Notes a. Pulse test; pulse width v 300 ms, duty cycle v 2%. b. Guaranteed by design, not subject to production testing. c. Independent of operating temperature. www.vishay.com 2 Document Number: 72160 S-03415--Rev. A, 03-Mar-03 SUM34N10-35 New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Output Characteristics 60 VGS = 10 thru 7 V 50 I D - Drain Current (A) I D - Drain Current (A) 6V 50 60 Vishay Siliconix Transfer Characteristics 40 40 30 30 TC = 125_C 20 20 5V 10 4V 0 0 2 4 6 8 10 10 25_C - 55_C 0 0 1 2 3 4 5 6 7 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) Transconductance 75 TC = - 55_C g fs - Transconductance (S) r DS(on) - On-Resistance ( W ) 60 25_C 0.08 0.10 On-Resistance vs. Drain Current 45 125_C 0.06 VGS = 6 V 0.04 30 15 0.02 VGS = 10 V 0 0 10 20 30 40 50 0.00 0 10 20 30 40 50 60 ID - Drain Current (A) ID - Drain Current (A) Capacitance 3000 20 Gate Charge 2400 C - Capacitance (pF) Ciss 1800 V GS - Gate-to-Source Voltage (V) 16 VDS = 50 V ID = 30 A 12 1200 8 600 Crss 4 Coss 0 0 20 40 60 80 100 0 0 10 20 30 40 50 60 70 VDS - Drain-to-Source Voltage (V) Document Number: 72160 S-03415--Rev. A, 03-Mar-03 Qg - Total Gate Charge (nC) www.vishay.com 3 SUM34N10-35 Vishay Siliconix New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) On-Resistance vs. Junction Temperature 2.5 VGS = 10 V ID = 20 A r DS(on) - On-Resistance (W) (Normalized) 2.0 I S - Source Current (A) 100 Source-Drain Diode Forward Voltage 1.5 TJ = 150_C 10 TJ = 25_C 1.0 0.5 0.0 - 50 - 25 0 25 50 75 100 125 150 175 1 0 0.3 0.6 0.9 1.2 TJ - Junction Temperature (_C) VSD - Source-to-Drain Voltage (V) Avalanche Current vs. Time 1000 130 125 100 V (BR)DSS (V) I Dav (a) Drain Source Breakdown vs. Junction Temperature ID = 1.0 mA 120 115 110 105 10 IAV (A) @ TA = 25_C 1 100 IAV (A) @ TA = 150_C 0.1 0.00001 0.0001 0.001 0.01 0.1 1 95 - 50 - 25 0 25 50 75 100 125 150 175 tin (Sec) TJ - Junction Temperature (_C) www.vishay.com 4 Document Number: 72160 S-03415--Rev. A, 03-Mar-03 SUM34N10-35 New Product THERMAL RATINGS Vishay Siliconix Maximum Avalanche and Drain Current vs. Case Temperature 40 1000 Safe Operating Area Limited by rDS(on) 30 I D - Drain Current (A) I D - Drain Current (A) 100 10 ms 100 ms 10 1 ms 10 ms 1 TC = 25_C Single Pulse Case Temperature = 25_C 0 0 25 50 75 100 125 150 175 0.1 0.1 1 10 100 1000 dc, 100 ms 20 10 TC - Ambient Temperature (_C) VDS - Drain-to-Source Voltage (V) Normalized Thermal Transient Impedance, Junction-to-Case 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10 -4 10 -3 10 -2 10 -1 1 10 Square Wave Pulse Duration (sec) Document Number: 72160 S-03415--Rev. A, 03-Mar-03 www.vishay.com 5 |
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